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| DG308B/309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION The DG308B/309B analog switches are highly improved versions of the industry-standard DG308A/309. These devices are fabricated in Vishay Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG308B and DG309B can handle up to 22 V input signals. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG308B is a normally open switch and the DG309B is a normally closed switch. (See Truth Table.) FEATURES * * * * * * * * 22 V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance - rDS(on): 45 Low Leakage - ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching - tON: < 200 ns Low Glitching - Q: 1 pC Pb-free Available RoHS* COMPLIANT BENEFITS * * * * * * * Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG308A/309 Space Savings (TSSOP) APPLICATIONS * * * * * * * Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG308B Dual-In-Line, SOIC and TSSOP IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ NC S3 D3 IN3 TRUTH TABLE Logic 0 1 Logic "0" 3.5 V Logic "1" 11 V DG308B OFF ON DG309B ON OFF Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70047 S-71241-Rev. F, 25-Jun-07 www.vishay.com 1 DG308B/309B Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG308BDJ DG308BDJ-E3 DG309BDJ DG309BDJ-E3 DG308BDY DG308BDY-E3 DG308BDY-T1 DG308BDY-T1-E3 16-Pin Narrow SOIC - 40 to 85 C DG309BDY DG309BDY-E3 DG309BDY-T1 DG309BDY-T1-E3 DG308BDQ DG308BDQ-E3 DG308BDQ-T1 DG308BDQ-T1-E3 16-Pin TSSOP DG309BDQ DG309BDQ-E3 DG309BDQ-T1 DG309BDQ-T1-E3 16-Pin PlasticDIP ABSOLUTE MAXIMUM RATINGS Parameter Voltages Referenced, V+ to VGND Digital Inputsa, VS, VD Current, Any Terminal Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) Storage Temperature (AK Suffix) (DJ, DY and DQ Suffix) 16-Pin Plastic DIPc Power Dissipation (Package)b 16-Pin Narrow SOIC and TSSOPd 16-Pin CerDIP e Limit 44 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 470 640 900 Unit V mA C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/C above 75 C. d. Derate 7.6 mW/C above 75 C. e. Derate 12 mW/C above 75 C. www.vishay.com 2 Document Number: 70047 S-71241-Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current Digital Control Input, Voltage High Input, Voltage Low Input Current Input Capacitance Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel-On Capacitance Off-Isolation Channel-to-Channel Crosstalk Power Supply Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK VS = 3 V, See Figure 2 CL = 1000 pF, Vg = 0 V, Rg = 0 VS = 0 V, f = 1 MHz, VD = VS = 0 V, f = 1 MHz CL = 15 pF, RL = 50 , VS = 1 VRMS, f = 100 kHz Room Room Room Room Room Room Room Room 1 5 5 16 90 95 dB pF 200 150 200 150 ns pC VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room 5 -1 11 3.5 1 -1 11 3.5 1 V A pF Symbol VANALOG rDS(on) rDS(on) IS(off) ID(off) ID(on) VD = 10 V, IS = 1 mA VS = 14 V, VD = 14 V VD = 14 V, VS = 14 V VS = VD = 14 V VIN = 11 V, 3.5 Vf Tempb Full Room Full Room Room Full Room Full Room Full 45 2 Typc A Suffix - 55 to 125 C Mind - 15 Maxd 15 85 100 - 0.5 - 20 - 0.5 - 20 - 0.5 - 40 0.5 20 0.5 20 0.5 40 - 0.5 -5 - 0.5 -5 - 0.5 - 10 D Suffix - 40 to 85 C Mind - 15 Maxd 15 85 100 0.5 5 0.5 5 0.5 10 nA Unit V % 0.01 0.01 0.02 I+ VIN = 0 V or 15 V IVOP Room Full Room Full Full 1 5 -1 -5 -1 -5 1 5 A 4 22 4 22 V Document Number: 70047 S-71241-Rev. F, 25-Jun-07 www.vishay.com 3 DG308B/309B Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLYa Test Conditions Unless Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Power Supply Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 V or 12 V IVOP Room Full Room Full Full 1 5 -1 -5 4 44 -1 -5 4 44 1 5 A Symbol VANALOG rDS(on) tON tOFF Q VD = 3 V, 8 V, IS = 1 mA VIN = 11 V, 3.5 Vf Tempb Full Room Full Room Room Room 4 90 Typc A Suffix - 55 to 125 C Mind 0 Maxd 12 160 200 300 200 D Suffix - 40 to 85 C Mind 0 Maxd 12 160 200 300 200 Unit V VS = 8 V, See Figure 2 CL = 1 nF, Vgen = 6 V, Rgen = 0 ns pC V Notes: a. Refer to PROCESS OPTION FLOWCHART . b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70047 S-71241-Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix TYPICAL CHARACTERISTICS 110 r DS(on) - Drain-Source On-Resistance () 100 90 80 70 60 50 40 30 20 10 - 20 - 16 - 12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) 10 V 15 V 5V r DS(on) - Drain-Source On-Resistance () 25 C, unless otherwise noted 100 90 80 70 60 50 40 30 20 10 0 - 15 125 C 85 C 25 C - 55 C V+ = 15 V V- = - 15 V 20 V - 10 -5 0 5 10 15 VD - Drain Voltage (V) rDS(on) vs. VD and Power Supply Voltages 250 r DS(on) - Drain-Source On-Resistance () 225 200 20 I S,I D - Current (pA) 175 150 125 10 V 100 75 50 25 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) - 30 - 40 - 20 12 V 15 V 7V 10 0 - 10 - 20 V+ = 5 V 40 30 rDS(on) vs. VD and Temperature V+ = 22 V V- = - 22 V TA = 25 C ID(on) IS(off), ID(off) - 15 - 10 -5 0 5 10 15 20 Analog Voltage rDS(on) vs. VD and Single Power Supply Voltages 1 nA V+ = 15 V V- = - 15 V VS, V D = 14 V 30 Leakage Currents vs. Analog Voltage 20 I S, I D - Current 100 pA Q - Charge (pC) 10 V+ = 15 V V- = - 15 V V+ = 12 V V- = 0 V - 10 0 IS(off), ID(off) 10 pA - 20 1 pA - 55 - 35 - 15 5 25 45 65 85 105 125 - 30 - 15 - 10 -5 0 5 10 15 Temperature (C) Analog Voltage (V) Leakage Currents vs. Temperature QS, QD - Charge Injection vs. Analog Voltage Document Number: 70047 S-71241-Rev. F, 25-Jun-07 www.vishay.com 5 DG308B/309B Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 120 110 100 OIRR (dB) 90 RL = 50 80 70 60 50 40 10 k 100 k 1M 10 M V+ = 15 V V- = - 15 V f - Frequency (Hz) Off Isolation vs. Frequency SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX Level Shift/ Drive INX VV+ DX GND V- Figure 1. www.vishay.com 6 Document Number: 70047 S-71241-Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix TEST CIRCUITS + 15 V V+ VS = + 3 V S IN 12 V GND VRL 1 k CL 35 pF Switch Output - 15 V VO = VS RL RL + rDS(on) VO tON 90 % D VO Logic Input 12 V 50 % 0V tOFF tr < 20 ns tf < 20 ns Figure 2. Switching Time C + 15 V C VS V+ + 15 V V+ S1 Rg= 50 IN1 0 V, 15 V IN 50 NC GND VC 0 V, 15 V S2 D2 VO 50 GND - 15 V VC D1 50 VS Rg = 50 0 V, 15 V S D VO IN2 Off Isolation = 20 log VS VO C = RF bypass XTA LK Isolation = 20 log VS VO - 15 V Figure 3. Off Isolation Figure 4. Channel-to-Channel Crosstalk + 15 V V+ S IN 12 V GND VD VO CL 1000 pF INX ON VO VO Rg Vg OFF ON V O = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x VO - 15 V Figure 5. Charge Injection Document Number: 70047 S-71241-Rev. F, 25-Jun-07 www.vishay.com 7 DG308B/309B Vishay Siliconix APPLICATIONS 30 pF +5V VIN1 VL V+ + 15 V + 15 V + LM101A VIN2 + 15 V - 15 V DG419 CH GND V- 15 V Gain = RF + RG RG Gain 1 (x 1) Gain 2 (x 10) Gain 3 (x 100) Gain 4 (x 1000) RF1 18 k RF1 9.9 k RF1 100 k DG308B RG1 2 k RG2 100 RG3 100 VLogic High = Switch On - 15 V GND Figure 6. A Precision Amplifier with Digitally Programmable Inputs and Gains 15 V V+ Logic Input Low = Sample High = Hold 1 k + 15 V - 15 V LM101A VIN + 5 M 5.1 M V30 pF - 15 V 50 pF 200 1000 pF J500 J507 - 15 V 2N4400 VOUT J202 + 15 V DG309B Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 s = 1 s = 5 mV = 5 mV/s Figure 7. Sample-and-Hold www.vishay.com 8 Document Number: 70047 S-71241-Rev. F, 25-Jun-07 DG308B/309B Vishay Siliconix APPLICATIONS + 15 V 160 C4 fC4 Select fC3 Select TTL Control fC2 Select fC1 Select 150 pF C3 1500 pF C2 0.015 F C1 0.15 F 0 VfL1 fL2 fL3 fL4 Voltage Gain dB 80 fC1 40 fC2 fC3 fC4 V1 120 DG309B GND - 40 1 10 100 1k 10 k 100 k 1M - 15 V + 15 V R1 = 10 k LM101A + R2 = 10 k 30 pF R3 = 1 M Frequency - Hz - 15 V VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2R3CX fL (Unity Gain Frequency) = Max Attenuation = rDS(on) 10 k 1 2R1CX R3 R1 = 100 (40 dB) - 40 dB Figure 8. Active Low Pass Filter with Digitally Selected Break Frequency Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70047. Document Number: 70047 S-71241-Rev. F, 25-Jun-07 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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